Understanding the electronic structure of intrinsic magnetic topological insulator – MnBi2Te4

Quantum anomalous Hall effect is an interesting physics phenomenon which can be applied to engineer next generation electronics for achieving faster and more efficient computing. However, its realisation is currently limited to extremely low temperatures. This thesis addresses the challenge of the quantum anomalous Hall effect temperature limit by studying the electronic properties of a novel material MnBi2Te4 using photoemission spectroscopy and scanning tunnelling microscopy. The results in this thesis will provide guidance and insight from the material aspect for engineering quantum anomalous Hall device at higher temperature in the future.