Nanoscale Electrical, Mechanical, and Optoelectronic Properties of III-nitrides via Advanced Atomic Force Microscopy

Motivated by the trend of miniaturization of III-nitrides technology and the rising demand for multifunctional devices, this thesis investigates the nanoscale functional properties of III-nitrides at the nanoscale. It reveals the light-induced strain effect for the first time in III-nitrides, extending the applications of III-nitrides to the optomechanical domain. Besides, it investigates the defects in a relatively new III-nitride, the indium nitride. This insight is essential to producing high-quality indium nitride, crucial for realizing the next-generation terahertz applications. Lastly, this thesis showcases the use of various atomic force microscopy techniques for drawing valuable insight into semiconductors’ nanoscale material properties.