Etch rate study of inductively coupled plasma reactive ion etching of image reversal AZ 5214E photoresist coated multiple inorganic substrates.

This thesis examines reactive ion etching on AZ 5214E photoresist (PR) coated five different semiconductor materials, where the PR functions as etch mask. It identifies an optimized etching process to successfully etch materials within thermal conductivity range 12- 50.1 W/m-K in order to achieve high quality physical micropatterns.