Design, fabrication and experimental characterization of III-nitride semiconductor based light sources

III-Nitride based materials have gained prominence for various applications, especially in the field of optoelectronics research for their many attractive properties like a direct and wide band-gap. Further spintronics has been a key component of the research roadmap in recent times along with nanostructured semiconductors for possible performance enhancements. Therefore, we have used the III-Nitride based semiconductor for preparing the Cr-doped dilute magnetic semiconductor (DMS) and subsequently the spin-LED to verify spin injection till 200 K with the DMS. We could make a superluminescent LED with a InGaN-based nanowire device as well as a room temperature nano-laser by incorporating external reflecting elements, wherein the nanowires were prepared by a novel method. In future, work in the direction of studying the transient electron and spin dynamics in the 1-D nanostructures and integrating the DMS to inject spin polarized carriers into the nanowire laser would be interesting and fruitful with many practical applications. Thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy of the Indian Institute of Technology Bombay, India and Monash University, Australia.